About the AHI2200 | AHI2300 High-Temperature Pressure Sensors
The unique Silicon-on-Sapphire sensor technology provides outstanding performance and gives excellent stability over a wide temperature range. The advanced sensor design consists of a piezoresistive silicon strain gauge circuit, which is epitaxially grown onto the surface of a sapphire diaphragm to form a single crystalline structure. The sapphire sensor element is then molecularly bonded to a Titanium alloy sub-diaphragm. This enables the sensor to endure higher over-pressures and provides superb corrosion resistance. The completed sensor exhibits virtually no hysteresis and excellent long-term stability. With outstanding insulation properties, the sapphire substrate allows the sensor to operate over a very wide temperature range without loss of performance.
Additional features AHI2200 | AHI2300
- Good chemical compatibility for a range of applications
- A range of electrical and process connections available
Applications AHI2200 | AHI2300
- environments where there are elevated ambient temperatures of up to 200°C
